巴西专利BR112014011800B1 bipolar electrostatic transfer head

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专利摘要:
HEAD OF MICRO DEVICE TRANSFER. It consists of a microdevice transfer head and a head arrangement that are revealed. In one embodiment, the microdevice transfer head includes a base substrate, a table structure with side walls, an electrode formed on the table structure, and a dielectric layer that covers the electrode. A tension can be applied to the microdevice transfer head and head arrangement to take a microdevice from a carrier substrate and release the microdevice on a receiving substrate.
公开号:BR112014011800B1
申请号:R112014011800-0
申请日:2012-11-07
公开日:2020-12-22
发明作者:Andreas Bibl；John A. Higginson；Hung-Fai Stephen Law；Hsin-Hua Hu
申请人:Apple Inc；
IPC主号:

专利说明:

BACKGROUND RELATED DEPOSIT REQUESTS
[0001] This application claims priority benefit from provisional patent application serial number US 61 / 561,706 filed on November 18, 2011, provisional patent application serial number US 61 / 594,919 filed on February 3, 2012 and provisional patent application No. US series 61 / 597,109 filed on February 9, 2012, the full disclosures of which are hereby incorporated by reference. FIELD
[0002] The present invention relates to microdevices. More particularly, the embodiments of the present invention relate to a microdevice transfer head and a method of transferring one or more microdevices to a receiving substrate. BACKGROUND INFORMATION
[0003] Integration and packaging issues are one of the main obstacles to the commercialization of microdevices, for example, micro-keys of radio frequency micro-electromechanical (MEMS) systems, LED display systems (LED) and oscillators based on MEMS or quartz.
[0004] Traditional technologies for transferring devices include transferring through tablet connection from a transferring tablet to a receiving tablet. Such an implantation is "direct printing" which involves a step of connecting an arrangement of devices from a transfer pad to a receiving pad, followed by removal of the transfer pad. Another such deployment is "transfer printing" which involves two steps of switching on / off. In transfer printing a transfer insert can take an arrangement of devices from a donor insert and then connect the arrangement of the devices to a receiving insert, followed by removal of the transfer insert.
[0005] Some variations of the printing process have been developed in which a device can be selectively turned on and off during the transfer process. In both traditional technologies and variations of direct printing and transfer printing, the transfer pad is disconnected from a device after connecting the device to the receiving pad. In addition, the entire transfer pad with the device arrangement is involved in the transfer process. SUMMARY OF THE INVENTION
[0006] A head and array of microdevice transfer heads and a method of transferring one or more microdevices to a receiving substrate are disclosed. For example, the receiving substrate can be, but is not limited to, a display substrate, a lighting substrate, a substrate with functional devices such as transistors or integrated circuits (ICs) or a substrate with lines of metal redistribution.
[0007] In one embodiment, a microdevice transfer head includes a base substrate, a table structure that includes side walls, at least one is the electrode formed on the table structure and a dielectric layer that covers the electrode. For example, the microdevice transfer head can incorporate a monopolar or bipolar electrode structure. The table structure can be separated or integrally formed with the base substrate. The side walls can be tapered and projected in the opposite direction from the base substrate to a top surface of the table structure, with the electrode formed on the top surface. An electrode conductor can extend from the electrode in order to make contact with the wiring in the base substrate and connect the microdevice transfer head to the operating electronic components of an electrostatic holder assembly. The electrode conductors can run through the electrode on the top surface of the table structure and along a side wall of the table structure. The electrode conductor can alternatively run below the table structure and connect a path that runs through the table structure to the electrode.
[0008] The electrode and electrode conductors can be covered with a deposited dielectric layer. Suitable materials for the dielectric layer include, but are not limited to, aluminum oxide (Al2O3) and tantalum oxide (Ta2O5). Once the dielectric layer is laid out, the electrode and electrode conductors can be formed of a material that can withstand high deposition temperatures, which includes high-melting metals such as platinum and refractory metals or refractory metal alloys such as titanium tungsten (TiW).
[0009] In one embodiment, a method of transferring a microdevice includes placing a transfer head on a microdevice connected to a carrier substrate. The microdevice is placed in contact with the transfer head and a voltage is applied to an electrode on the transfer head to create a grip pressure on the microdevice. The transfer head picks up the microdevice and then releases the microdevice on a receiving substrate. The voltage can be applied to the electrode prior to, while or after contacting the microdevice with the transfer head. The voltage can be a constant current voltage or alternating current voltage. In one embodiment, an alternating current voltage is applied to a bipolar electrode structure. In one embodiment, an operation is still performed to create a phase change in a bonding layer that connects the microdevice to the carrier substrate prior to or while picking up the microdevice.
[0010] In one embodiment, the bonding layer is heated to create a phase change from solid to liquid in the bonding layer prior to or while picking up a microdevice. Depending on the operating conditions, a substantial portion of the bonding layer can be held and transferred with the microdevice. A variety of operations can be performed to control the phase of the bonding layer portion when picking, transferring, contacting the receiving substrate and releasing the microdevice and the bonding layer portion on the receiving substrate. For example, the portion of the bonding layer that is held with the microdevice can be kept in a liquid state when in contact with the receiving substrate and during the release operation on the receiving substrate. In another embodiment, the portion of the bonding layer can be left to naturally cool to a solid phase after being held. For example, the portion of the bonding layer may be in a solid phase prior to or during contact with the receiving substrate and again fused to a liquid state during the release operation. A variety of temperature and material phase cycles can be performed according to the modalities of the invention.
[0011] In one embodiment, a method of transferring an array of microdevices includes positioning an array of transfer heads on an array of microdevices. The array of microdevices is brought into contact with the array of transfer heads and a voltage is selectively applied to a portion of the array of transfer heads. Selectively applying a voltage can include applying a voltage to all of the transfer heads in the array or to a portion that corresponds to less than all of the transfer heads in the array. The corresponding portion of the microdevice array is then taken with the transfer head array portion and the microdevice array portion is selectively released on at least one receiving substrate. In one embodiment, the arrangement of transfer heads can be rubbed into the arrangement of microdevices while making contact in order to dislodge any particles that may be present on the contact surface of any of the transfer heads or microdevices. In one embodiment, a phase change is created in an arrangement of locations laterally separate from the bonding layer that connect the array of microdevices to the carrier substrate prior to the footprint of the array of microdevices.
[0012] In one embodiment, a method of fabricating a microdevice transfer head arrangement includes forming an arrangement of table structures on a base substrate, with each table structure including side walls. A separate electrode is formed over each table structure and a dielectric layer is placed over the arrangement of table structures and each electrode. In one embodiment, the dielectric layer is arranged with the deposition of the atomic layer (ALD) and can be free of micro-orifice. The dielectric layer can include one or multiple dielectric layers. A conformal passivation layer can optionally be cultivated or deposited on the base substrate and the arrangement of table structures prior to the formation of the separate electrode on each corresponding table structure. In one embodiment, a conductive ground plane is formed over the dielectric layer and surrounds each of the table structures. BRIEF DESCRIPTION OF THE DRAWINGS
[0013] Figure 1 is a cross-sectional side view of a monopolar microdevice transfer head according to an embodiment of the invention.
[0014] Figure 2 is an isometric view illustration of a monopolar microdevice transfer head according to an embodiment of the invention.
[0015] Figure 3 is a side view illustration in cross-section of a bipolar microdevice transfer head according to an embodiment of the invention.
[0016] Figure 4 is an isometric view illustration of a bipolar microdevice transfer head according to an embodiment of the invention.
[0017] Figures 5 to 6 are top view illustrations of a bipolar microdevice transfer head according to an embodiment of the invention.
[0018] Figure 7 is an isometric view illustration of a bipolar microdevice transfer head that includes conductive pathways according to an embodiment of the invention.
[0019] Figure 8 is an isometric view illustration of a bipolar microdevice transfer head arrangement according to an embodiment of the invention.
[0020] Figure 9 is an isometric view illustration of a bipolar microdevice transfer head arrangement that includes a conductive ground plane according to an embodiment of the invention.
[0021] Figure 10 is a side view illustration in cross section of a bipolar microdevice transfer head arrangement that includes a conductive ground plane according to an embodiment of the invention.
[0022] Figure 11 is a flow chart illustrating a method of picking up and transferring a microdevice from a carrier substrate to a receiving substrate according to an embodiment of the invention.
[0023] Figure 12 is a schematic illustration of an alternating voltage applied through a bipolar electrode according to an embodiment of the invention.
[0024] Figure 13 is a schematic illustration of a constant voltage applied through a bipolar electrode according to an embodiment of the invention.
[0025] Figure 14 is a schematic illustration of a constant voltage applied to a monopolar electrode according to an embodiment of the invention.
[0026] Figure 15 is a flow chart illustrating a method of picking up and transferring a microdevice from a carrier substrate to a receiving substrate according to an embodiment of the invention.
[0027] Figure 16 is a flow chart illustrating a method of picking up and transferring an array of microdevices from a carrier substrate to at least one receiving substrate according to one embodiment of the invention.
[0028] Figure 17 is a cross-sectional side view illustration of a microdevice transfer head arrangement in contact with an LED microdevice arrangement according to an embodiment of the invention.
[0029] Figure 18 is a side view illustration in cross section of a microdevice transfer head arrangement in contact with an LED microdevice arrangement according to an embodiment of the invention.
[0030] Figure 19 is a side view illustration in cross section of a microdevice transfer head arrangement that takes an LED microdevice arrangement according to an embodiment of the invention.
[0031] Figure 20 is a cross-sectional side view illustration of a microdevice transfer head arrangement that takes a portion of an LED microdevice arrangement according to an embodiment of the invention.
[0032] Figure 21 is a cross-sectional side view illustration of a microdevice transfer head arrangement with an LED microdevice arrangement positioned on a receiving substrate according to an embodiment of the invention.
[0033] Figure 22 is a side view illustration in cross section of a microdevice released selectively on a receiving substrate according to an embodiment of the invention.
[0034] Figure 23 is a graphic illustration showing the pressure required to overcome the force of surface tension to pick up a microdevice of various dimensions according to one embodiment of the invention.
[0035] Figure 24 is a graphic illustration of the relationship between a surface tension and the increasing span distance created during a gripping operation according to a modality of the invention.
[0036] Figure 25 is a graphical illustration of the relationship between viscous force pressures and increasing span distance created during a gripping operation at various pull rates according to an embodiment of the invention.
[0037] Figure 26 is a graphic illustration obtained through modeling analysis that shows the grip pressure exerted by a transfer head on a microdevice as the transfer head is removed from the microdevice according to an embodiment of the invention.
[0038] Figure 27 is a side view illustration in cross section of a variety of LED micro structures that includes contact openings less than the top surface of the micro diode p-n according to an embodiment of the invention.
[0039] Figure 28 is a side view illustration in cross section of a variety of LED microstructures that includes contact openings with a width greater than the top surface of the micro diode p-n according to an embodiment of the invention.
[0040] Figure 29 is a side view illustration in cross section of a variety of LED micro structures that includes contact openings of the same width as the top surface of the micro diode p-n according to an embodiment of the invention. DETAILED DESCRIPTION OF THE INVENTION
[0041] The embodiments of the present invention describe a microdevice transfer head and array and a method of transferring a microdevice and array of microdevices to a receiving substrate. For example, the receiving substrate can be, but is not limited to, a display substrate, a lighting substrate, a substrate with functional devices such as transistors or integrated circuits (ICs) or a substrate with lines of metal redistribution. In some embodiments, the microdevices and the microdevice arrangement described in this document can be any of the LED device microstructures illustrated in Figures 27 to 29 and those in provisional US patent application No. 61 / 561.706 and in the provisional application. US patent No. 61 / 594,919 related. While some modalities of the present invention are described with specific regard to micro LEDs, it should be understood that the modalities of the invention are not so limited and that certain modalities may also be applicable to other microdevices, such as diodes, transistors, ICs and MEMS .
[0042] In various modalities, it is described with reference to the Figures. However, certain modalities can be practiced without one or more of these specific details or in combination with other known methods and configurations. In the following description, Numerous specific details are presented, such as, for example, specific configurations, dimensions and processes, etc., in order to provide a complete understanding of the present invention. In other instances, semiconductor processes and well-known manufacturing techniques have not been described in detail in particular in order not to unnecessarily obscure the present invention. Reference throughout this specification to "one (1) modality", "a modality" or the like means that a particular feature, structure, configuration or feature described in connection with the modality is included in at least one embodiment of the invention. Thus, the appearances of the phrase "in a modality", "a modality" or similar in various places throughout the specification are not necessarily reference to the same modality of the invention. Furthermore, resources, structures, configurations or characteristics in particular can be combined in any suitable way in one or more modalities.
[0043] The terms "about", "a", "between" and "in" as used in this document can refer to the relative position of each in relation to other layers. A layer "on" or "on" another layer or linked "to" another layer can be directly in contact with the other layer or can have one or more intervening layers. A layer "between" layers can be directly in contact with the layers or it can have one or more intervening layers.
[0044] The terms "micro" device or "micro" LED structure as used in this document can refer to the descriptive size of certain devices or structures according to the modalities of the invention. As used in this document, the terms "micro" devices or structures are intended to refer to the scale from 1 to 100 μm. However, it should be understood that the modalities of the present invention are not necessarily so limited and that certain aspects of the modalities may be applicable for larger and possibly smaller size scales.
[0045] In one aspect, the embodiments of the invention describe a way for mass transfer of an arrangement of prefabricated microdevices with an arrangement of transfer heads. For example, prefabricated microdevices may have specific functionality such as, but not limited to, an LED for light emission, silicon IC for logic and memory and gallium arsenide (GaAs) circuits for the frequency radio (RF) communications. In some embodiments, LED microdevice arrays that are ready to pick up are described as having a 10 μm by 10 μm pitch or a 5 μm by 5 μm pitch. At these densities a 15.24 cm 6 inch substrate, for example, can accommodate approximately 165 million LED microdevices with a 10 μm by 10 μm pitch or approximately 660 million LED microdevices with a 5 μm by 5 μm pitch. A transfer tool that includes an array of transfer heads that corresponds to the range of the corresponding array of LED microdevices can be used to pick up and transfer the array of LED microdevices to a receiving substrate. In this way, it is possible to integrate and assemble LED microdevices in integrated systems in a heterogeneous manner, which includes substrates of any size ranging from micro displays to large display areas and at high transfer rates. For example, an arrangement of 1 cm by 1 cm of microdevice transfer head can pick up and transfer more than 100,000 microdevices, with larger arrays of microdevice transfer heads capable of transferring more microdevices. Each transfer head in the transfer head arrangement can also be independently controllable, enabling you to selectively pick up and release microdevices.
[0046] In one aspect, without being limited to a specific theory, the modalities of the invention describe the microdevice transfer head and head arrangements that operate according to the principles of electrostatic handles, which use the attraction of opposite charges to pick up the microdevices. In accordance with the modalities of the present invention, an attraction voltage is applied to a microdevice transfer head in order to generate a grip force on a microdevice and pick up the microdevice. The grip force is proportional to the area of the loaded plate, thus it is calculated as a pressure. According to the ideal electrostatic theory, a non-conductive dielectric layer between a monopolar electrode and a conductive substrate yields a Pascal (Pa) grip pressure in equation (1) of:

[0047] Where So = 8.85.10-12, V = substrate-electrode voltage in volts (V), Sr = dielectric constant and d = dielectric thickness in meters (m). With a bipolar grip using two grip electrodes the voltage (V) in the above equation is half the voltage between electrodes A and B, [VA - VB] / 2. The potential substrate is centered on the average potential, [VA = VB] / 2. This average is usually zero with VA = [- VB].
[0048] In another aspect, the modalities of the invention describe a bonding layer that can hold a microdevice on a carrier substrate during certain processing and handling operations and after submitting a phase change provides a means in which the microdevice can be however, it is also readily releasable during a picking operation. For example, the bonding layer can be re-meltable or fluid so that the bonding layer undergoes a phase change from solid state to liquid prior to or during the picking operation. In the liquid state the bonding layer can hold the microdevice in place on a carrier substrate while also providing a medium from which the microdevice is readily releasable. Without being limited to a specific theory, in determining the grip pressure that is required to pick up the microdevice from the carrier substrate the grip pressure must exceed the forces that hold the microdevice to the carrier substrate, which may include, but is not limited to , surface tension forces, capillary forces, viscous effects, elastic restoration forces, van-der-Waals forces, static friction and gravity.
[0049] According to the modalities of the invention, when the dimensions of a microdevice are reduced below a certain range, the forces of surface tension forces of the liquid bonding layer that holds the microdevice to the carrier substrate can become dominant over other forces that hold the microdevice. Figure 23 is a graphic illustration of a modality obtained through modeling analysis that shows the pressure required to overcome the surface tension force to pick up a microdevice of various dimensions, assuming a bonding layer of liquid indium (In) with a voltage surface area of 560 mN / m at a melting temperature of 156.7 oC. For example, with reference to Figure 23, a large microdevice of 10 μm by 10 μm exemplifier is retained on a carrier substrate with a surface tension pressure of approximately 0.22 MPa (2.2 atmospheres (atm)) with a layer of indium bond that has a net surface tension of 560 mN / m at its melting temperature of 156.7 oC. This is significantly higher than the pressure due to gravity, which is approximately 0.18 MPa (1.8 x 10-6atm) for a tall piece of gallium nitride 10 μm x 10 μm wide x 3 μm example (GaN).
[0050] Surface tension pressures and viscous effects can also be dynamic during the gripping operation. Figure 24 is a graphic illustration of a modality obtained through modeling analysis that shows the relationship of surface tension and the increasing span distance created during the picking operation of a large microdevice of 10 μm by 10 μm exemplifier retained on a substrate carrier with a fused Indian bonding layer (In). The span distance referred to in Figure 24 is the distance between the bottom of the microdevice and the carrier substrate and starts at 2 μm which corresponds to an unfused thickness of the In bonding layer. As shown in Figure 24, a tension pressure of 0.22 MPa (2.2 atm) surface is initially overcome by the grip pressure at the start of the picking operation. As the microdevice is then lifted from the carrier substrate, the surface tension quickly drops, with pressure leveling as the microdevice is further elevated in the opposite direction from the carrier substrate.
[0051] Figure 25 is a graphic illustration of a modality obtained through modeling analysis that shows the relationship of viscous force pressures (atm) and the increasing span distance (μm) created during a picking operation at various rates of pull to a microdevice of 10 μm for 10 μm exemplifier retained in a carrier substrate with a layer of fused indium bond (In). The span distance referred to in Figure 25 is the distance between the bottom of the microdevice and the carrier substrate and starts at 2 μm which corresponds to an unfused thickness of the In bonding layer. As shown, the viscous force pressures are more apparent during faster lifting speeds such as 1,000 mm / s than for slower lifting speeds such as 0.1 mm / s. Still, the pressures generated from the viscous effects using the exemplary elevation speeds in Figure 25 are significantly less than the surface tension pressure generated and illustrated in Figure 24 which suggests that the surface tension pressure is the dominant pressure that needs to be overcome by the grip pressure during the picking operation.
[0052] If an air gap of size (g) is present between the dielectric layer of the microdevice transfer head and a conductive top surface of the microdevice, then the grip pressure in equation (2) is:

[0053] It is contemplated that an air gap may be present due to a variety of sources that include, but are not limited to, contamination, warping and misalignment in particular of any surface of the transfer head or microdevice or the presence of an additional layer on the transfer head or on the microdevice, such as, for example, an edge of a conformal dielectric barrier layer around the top conductive surface of a microdevice. In one embodiment, an edge of a conformal dielectric barrier layer can create both an air gap in which a contact opening is formed and increases the effective thickness of the transfer head dielectric layer where the edge is present.
[0054] As seen from equations (1) and (2) above, the lower stresses can be used where no air gap is present between the microdevice transfer head and the microdevice to be held. However, when an air gap is present this presents a series capacitance in which the air capacitance can compete with the dielectric layer capacitance. In order to compensate for the possibility of an air capacitance between any of a microdevice transfer head arrangement over a corresponding array of microdevices to be picked up, a higher operating voltage, a higher dielectric constant for the dielectric material or a thinner dielectric material can be used to maximize the electric field. However, the use of a higher electric field has limitations due to the possible collapse and dielectric spark.
[0055] Figure 26 is a graphic illustration of a modality obtained through modeling analysis that shows the grip pressure exerted by a transfer head on a microdevice as the transfer head is removed from the top conductive surface of the microdevice, which corresponds to an increasing air gap size. The different lines correspond to different thicknesses of Ta2O5 dielectric layer between 0.5 μm and 2.0 μm in the transfer head, with the electric field being kept constant. As illustrated, no appreciable effect on the grip pressure is seen under these conditions below air gap sizes of approximately 1 nm (0.001 μm) and still as high as 10 nm (0.01 μm) for some conditions. However, it must be understood that the tolerable air gap can be increased or decreased by changing conditions. Thus, according to some embodiments of the invention, a certain amount of air gap tolerance is possible during the picking operation and actual contact with the microdevice transfer head and the conductive top surface of the microdevice may not be necessary.
[0056] Now, assuming that the grip pressure required to pick up the microdevice from the carrier substrate must exceed the sum of pressures that retain the microdevice on the carrier substrate (as well as any pressure reduction due to the air gap) it is possible to derive the interrelation of tension, dielectric constant and dielectric thickness of operation of the dielectric material in the microdevice transfer head by solving the handle pressure equations. For the sake of clarity, assuming the air gap distance is zero, for a monopolar electrode this becomes =:

[0057] The exemplary ranges of the calculated dielectric thickness values are provided in Table 1 for the desired pickup pressures of 202650 Pa (2 atm) and 2026500 Pa (20 atm) for the dielectric materials of Al2O3 and Ta2O5 between operating voltages between 25 V and 300 V in order to illustrate the interdependence of the grip pressure, the tension, the dielectric constant and the dielectric thickness according to an embodiment of the invention. The dielectric constants provided are approximate and it is understood that the values may vary depending on the manner of formation.

[0058] Since the grip pressure is proportional to the inverse square of the dielectric thickness, the dielectric thicknesses calculated in Table 1 represent the maximum thicknesses that can be formed to reach the required grip pressure with the defined operating voltage. The lower thicknesses than those provided in Table 1 can result in the higher pressure of the handles at the defined operating voltage, however, the lower thicknesses increase the electric field applied through the dielectric layer which requires the dielectric material process to have a sufficient dielectric strength for resist the applied electric field without short circuit. It should be understood that the handle pressure, tension, dielectric constant and dielectric thickness values provided in Table 1 are exemplary in nature and provided in order to provide a basis for the microdevice transfer head operating ranges according to with the modalities of the invention. The relationship between the values of handle pressure, tension, dielectric constant and dielectric thickness provided in Table 1 has been illustrated according to the ideal electrostatic theory and the modalities of the invention are not limited by them.
[0059] Referring now to Figure 1, a side view illustration of a head and a monopolar microdevice transfer head arrangement according to an embodiment of the invention is provided. As shown, each monopolar device transfer head 100 can include a base substrate 102, a table structure 104 that includes a top surface 108 and side walls 106, an optional passivation layer 110 formed on table structure 104 and which includes a top surface 109 and side walls 107, an electrode 116 formed on the table frame 104 (and optional passivation layer 110) and a dielectric layer 120 with a top surface 121 covering the electrode 116. The substrate of base 102 can be formed from a variety of materials such as silicon, ceramics and polymers that are capable of providing structural support. In one embodiment, the base substrate has a conductivity between 103 and 1018ohm.cm. The base substrate 102 may further include the wiring (not shown) for connecting the microdevice transfer head 100 to the operating electronic components of an electrostatic holder assembly.
[0060] The table structure 104 can be formed using suitable processing techniques, and it can be formed from the same or different materials as the base substrate 102. In one embodiment, the table structure 104 is formed integrally with the base substrate 102, for example, using notching and lithographic patterning or casting techniques. In one embodiment, anisotropic engraving techniques can be used to form the tapered side walls 106 for table structure 104. In another embodiment, table structure 104 can be deposited or cultivated and provided with a pattern on top of the substrate. base 102. In one embodiment, table structure 104 is an oxide layer provided with a pattern, such as silicon dioxide, formed on a semiconductor substrate such as silicon.
[0061] In one aspect, table structures 104 generate a profile that projects in the opposite direction of the base substrate in order to provide a localized point of contact for picking up a specific microdevice during a picking operation. In one embodiment, table structures 104 have a height of approximately 1 μm to 5 μm or more specifically approximately 2 μm. The specific dimensions of the table structures 104 can depend on the specific dimensions of the microdevices to be taken, as well as the thickness of any layers formed on the table structures. In one embodiment, the height, width and flatness of the table frame arrangement 104 on the base substrate 102 are uniform across the base substrate so that each microdevice transfer head 100 is able to make contact with each corresponding microdevice during the picking operation. In one embodiment, the width across the top surface 121 of each microdevice transfer head is slightly greater, approximately the same or less than the width of the top surface of each microdevice in the corresponding microdevice arrangement so that a transfer head do not inadvertently make contact with a microdevice adjacent to the desired corresponding microdevice during the picking operation. As described in more detail below, since additional layers 110, 112, 120 can be formed on the table structure 104, the width of the table structure can account for the thickness of the overlying layers so that the width across the surface 121 of each microdevice transfer head is slightly larger, approximately the same or less than the width of the top surface of each microdevice in the corresponding microdevice arrangement.
[0062] Still with reference to Figure 1, table structure 104 has a top surface 108, which can be flat, and side walls 106. In one embodiment, side walls 106 can be tapered up to 10 degrees, for example. The tapering of the side walls 106 can be beneficial in the formation of electrodes 116 and electrode conductors 114 as described further below. A passivation layer 110 can then be optionally deposited or cultivated on the base substrate 102 and the arrangement of table structures 104. The passivation layer 110 can be deposited by a variety of suitable techniques such as, for example, chemical deposition (CVD), ion bombardment or atomic layer deposition (ALD). In one embodiment, the passivation layer 110 can be 0.5 μm - 2.0 μm oxide thickness, such as, but not limited to, silicon oxide (SiO2), aluminum oxide (Al2O3) or oxide tantalum (Ta2O5).
[0063] A conductive layer 112 can then be deposited on the arrangement of table structures 104 and optional passivation layer 110 and standardized to form electrodes 116 and electrode conductors 114. For example, a lifting technique can be used to form electrodes 116 and electrode conductors 114 in which a resistance layer is deposited and patterned on the substrate, followed by deposition of a metal layer and lifting of the resistance and portion of the metal layer in the resistance that leaves the desired pattern behind . Alternatively, a metal layer deposition followed by patterning and engraving can be performed to obtain the desired pattern. Electrode conductors 114 can exit electrode 116 over the top surface 108 of a table structure 104 (and top surface 109 of the optional passivation layer 110) and along a side wall 106 of table structure 104 (and at the along a side wall 107 of the optional passivation layer 110). The conductive layer 112 used to form electrodes 116 and electrode conductors 114 can be a single layer or multiple layers. A variety of conductive materials including metals, metal alloys, refractory metals, and refractory metal alloys can be used to form conductive layer 112. In one embodiment, conductive layer 112 has a thickness of up to 5,000 angstroms (0.5 μm). In one embodiment, conductive layer 112 includes a high melting metal such as platinum or a refractory metal or refractory metal alloy. For example, the conductive layer may include platinum, titanium, vanadium, chromium, zirconium, niobium, molybdenum, ruthenium, rhodium, hafnium, tantalum, tungsten, rhenium, osmium, iridium and alloys thereof. Refractory metals and refractory metal alloys generally exhibit greater resistance to heat and wear than other metals. In one embodiment, conductive layer 112 is a refractory metal alloy of titanium and tungsten (TiW) approximately 500 angstrom (0.05 μm) thick.
[0064] A dielectric layer 120 is then deposited on the electrodes 116 and other layers exposed on the base substrate 102. In one embodiment, the dielectric layer 120 has an adequate and constant dielectric thickness to obtain the required grip pressure from the head. transfer of microdevice 100 and sufficient dielectric strength not to break the operating voltage. The dielectric layer can be a single layer or multiple layers. In one embodiment, the dielectric layer is 0.5 μm to 2.0 μm thick, although the thickness may be more or less dependent on the specific topography of the transfer head 100 and underlying table structure 104. Suitable dielectric materials may include , but are not limited to, aluminum oxide (Al2O3) and tantalum oxide (Ta2O5). With reference to Table 1 above, the modalities of Al2O3 dielectric layers with applied electric fields (determined by dividing the voltage by the dielectric thickness) from 22 V / μm to 71 V / μm and Ta2O5 dielectric layers with applied electric fields of 9 V / μm at 28 V / μm were provided. According to embodiments of the invention, the dielectric layer 120 has a dielectric strength greater than the electric field applied in order to avoid shortening the transfer head during operation. The dielectric layer 120 can be deposited by a variety of suitable techniques such as chemical vapor deposition (CVD), atomic layer deposition (ALD) and physical vapor deposition (PVD) as ion bombardment. The dielectric layer 120 can be further annealed after deposition. In one embodiment, the dielectric layer 120 has a dielectric strength of at least 400 V / μm. Such a high dielectric strength may allow the use of a thinner dielectric layer than the calculated thicknesses provided in the exemplary Table 1. Techniques such as ALD can be used to deposit uniform, conformal, dense and / or micro-hole free dielectric layers with good dielectric strength. The multiple layers can also be used to obtain such a micro-orifice-free dielectric layer 120. Multiple layers of different dielectric materials can also be used to form a dielectric layer 120. In one embodiment, the underlying conductive layer 112 includes platinum or a metal refractory or refractory metal alloy that has a melting temperature above the deposition temperature of the dielectric layer material (s) so as not to be a limiting factor in the selection of the dielectric layer deposition temperature. In one embodiment, after deposition of the dielectric layer 120, a thin coating (not shown) can be formed on the dielectric layer 120 to provide a specific static friction coefficient to add lateral friction and keep the microdevices from being dropped from the transfer head. during the collection operation. In such an embodiment, the additional thin coating replaces the top surface 121 as the contact surface and that surface retains the dimensional arrangement requirements described in the present invention. In addition, the additional coating can affect the dielectric properties of the microdevice transfer head which can affect the operability of the microdevice transfer head. In one embodiment, the additional coating thickness may be minimal (for example, below 10 nm) in order to have little or no appreciable effect on the grip pressure.
[0065] Figure 2 is an isometric view of the electrode 116 and the electrode conductor 114 formed over an optional passivation layer 110 that covers a table structure 104. For clarity purposes, the overlying dielectric layer 120 is not illustrated and the optional passivation layer 110 and table structure 104 are illustrated as a single table structure / passivation layer 104/110. In an exemplary embodiment, where the passivation layer 110 and the dielectric layer 120 are both 0.5 μm thick, the top surface 108/109 of the table / passivation layer 104/110 structure on which electrode 116 is formed is approximately 7 μm x 7 μm to obtain a top surface of 8 μm x 8 μm from the transfer head 100. According to one embodiment, electrode 116 covers the maximum amount of the surface area of the top surface 108 / 109 of the table structure / passivation layer 104/110 as possible while remaining within standard tolerances. Minimizing the amount of free space increases the resulting capacitance and grip pressure that can be achieved by the microdevice transfer head. Although a certain amount of free space is illustrated on the top surface 108/109 of the table / passivation layer structure 104/110 in Figure 2, electrode 116 can cover the entire top surface 108/109. Electrode 116 can also be slightly larger than the top surface 108/109 and partially extend across the side walls 106/107 of the table / passivation layer 104/110 structure to ensure complete coverage of the top surface 108/109. It should be appreciated that the table arrangement can have a variety of different steps and that modalities of the invention are not limited to the top surface 7 μm x 7 μm exemplifying the table structure / passivation layer 104/110 in a step of 10 μm .
[0066] Referring now to Figure 3, a side view illustration is provided with a bipolar microdevice transfer head 100 and head arrangement according to an embodiment of the invention. As shown, the bipolar device transfer head 100 can include a base substrate 102, a table structure 104 that includes a top surface 108 and side walls 106, passivation layer 110 that includes a top surface 109 and side walls 107 , a pair of electrodes 116A, 116B and electrode conductors 114A, 114B formed on the table frame 104, an optional passivation layer 110 and a dielectric layer 120 covering the pair of electrodes 116A, 116B.
[0067] Figure 4 is an isometric view of electrodes 116A, 116B and electrode conductors 114A, 114B formed over an optional passivation layer 110 that covers a table structure 104. For clarity purposes, the overlying dielectric layer 120 is not illustrated and the optional passivation layer 110 and table structure 104 are illustrated as a single table structure / passivation layer 104/110. Figure 4 differs slightly from Figure 3 in that the electrode conductors 114A, 114B are illustrated as running along a single side wall instead of on opposite side walls of the table / passivation layer 104/110. The electrode conductors 114A, 114B can run along any suitable sidewall in accordance with embodiments of the invention. In an exemplary embodiment, where the top surface 108/109 of the table structure / passivation layer 104/110 is approximately 7 μm x 7 μm which corresponds to a table arrangement with a 10 μm pitch, the electrodes can cover the maximum amount of surface area of top surface 108/109 of table structure / passivation layer 104/110 as possible while still providing separation between electrodes 116A, 116B. The minimum amount of separation distance can be balanced by considerations to maximize the surface area while avoiding overlapping electrical fields from the electrodes. For example, electrodes 116A, 116B can be separated by 0.5 μm or less and the minimum separation distance can be limited by the height of the electrodes. In one embodiment, the electrodes are slightly larger than the top surface 108/109 in one direction and partially extend across the side walls of the table / passivation layer 104/110 structure to ensure maximum coverage of the top surface 108/109. It should be appreciated that the table arrangement can have a variety of different steps and that modalities of the invention are not limited to the top surface 7 μm x 7 μm exemplifying the table structure / passivation layer 104/110 in a step of 10 μm .
[0068] Referring now to Figures 5-6, top view illustrations of electrodes 116A, 116B of a bipolar microdevice transfer head are provided in accordance with embodiments of the invention. So far, table structure 104 has been described as a single table structure as shown in Figure 5. However, embodiments of the invention are not so limited. In the embodiment illustrated in Figure 6, each electrode 116 is formed in a separate table structure 104A, 104B separated by a ditch 105. An optional passivation layer 110 (not shown) can cover both table structures 104A, 104B.
[0069] Referring now to Figure 7, an isometric view illustration of an alternative electrode conductor configuration is provided according to an embodiment of the invention. In such an embodiment, electrode conductors 114A, 114B pass under a portion of table structure 104 and conductive pathways 117A, 117B pass through table structure 104 (and optional passivation layer 110 not shown) that connects electrodes 116A , 116B to the respective electrode conductors 114A, 114B. In such an embodiment, electrode conductors 114A, 114B can be formed prior to forming a table structure 104 and can be formed from the same or different conductive material as electrode conductors 114A, 114B and electrodes 116A, 116B. Although pathways 117A, 117B are illustrated in relation to a bipolar electrode structure in Figure 7, it should be appreciated that the path or pathways described above can also be integrated into monopolar electrode structures.
[0070] Referring now to Figures 8 to 10, one embodiment of the invention is illustrated in which a conductive ground plane is formed over the dielectric layer and surrounding the arrangement of table structures. Figure 8 is an isometric view illustration of an array of microdevice transfer heads 100 with a bipolar electrode configuration as previously described in relation to Figure 4. For clarity purposes, the underlying passivation layer and the optional overlying dielectric layer have not been illustrated. Referring now to Figures 9 to 10, a conductive ground plane 130 is formed over the dielectric layer 120 and surrounding the arrangement of table structures 104. The presence of a ground plane 130 can assist in preventing arching between transfer heads 100 , particularly when applying high voltages. The ground plane 130 can be formed of a conductive material which can be the same as or different from the conductive material used to form the electrodes or channels. The ground plane 130 can also be formed of a conductive material that has a lower melting temperature than the conductive material used to form the electrodes since it is not necessary to deposit a dielectric layer of comparable quality (eg dielectric strength) to dielectric layer 120 after the formation of the ground plane 130.
[0071] Figure 11 is a flow chart illustrating a method of collecting and transferring a microdevice from a carrier substrate to a receiving substrate according to an embodiment of the invention. In operation 1110, a transfer head is positioned on a microdevice connected to a carrier substrate. The transfer head can comprise a table structure, an electrode on the table structure and a dielectric layer that covers the electrode as described in the above modalities. Therefore, the transfer head can have a monopolar or bipolar electrode configuration, as well as any other structural variations as described in the above modalities. The microdevice is then placed in contact with the transfer head in operation 1120. In one embodiment, the microdevice is placed in contact with the dielectric layer 120 of the transfer head. In an alternative embodiment, the transfer head is positioned on the microdevice with a suitable air gap that separates them that do not significantly affect the handle pressure, for example, 1 nm (0.001 μm) or 10 nm (0, 01 μm). In operation 1130, a voltage is applied to the electrode to create a grip pressure on the microdevice and the microdevice is collected with the transfer head in operation 1140. The microdevice is then released on a receiving substrate in operation 1150.
[0072] Although operations 1110 to 1150 have been illustrated sequentially in Figure 11, it should be noted that modalities are not limited and that additional operations can be performed and certain operations can be performed in a different sequence. For example, in one embodiment, after contacting the microdevice with the transfer head, the transfer head is rubbed by a top surface of the microdevice to expel any particles that may be present on the contact surface or the transfer head or the microdevice. In another embodiment, an operation is performed to create a phase change in the bonding layer that connects the microdevice to the carrier substrate before or while collecting the microdevice. If a portion of the bonding layer is collected with the microdevice, additional operations can be performed to control the phase of the bonding layer portion during subsequent processing.
[0073] The 1130 operation of applying voltage to the electrode to create a grip pressure on the microdevice can be performed in several orders. For example, voltage can be applied before contacting the microdevice with the transfer head while placing the microdevice in contact with the transfer head or after contacting the microdevice with the transfer head. The voltage can also be applied before, during or after the creation of the phase change in the connection layer.
[0074] Figure 12 is a schematic illustration of an alternating voltage applied by a bipolar electrode with the transfer head in contact with a microdevice according to an embodiment of the invention. As illustrated, a separate alternating current (AC) voltage source can be applied to each electrode conductor 114A, 114B with an alternating voltage applied by the pair of electrodes 116A, 116B so that a particular point in time when a negative voltage is applied to electrode 116A, a positive voltage is applied to electrode 116B and vice versa. The release of the transfer head microdevice can be achieved with a variety of methods that include turning off the voltage sources, decreasing the voltage across the pair of electrodes, changing an AC voltage waveform and grounding the voltage source. Figure 13 is a schematic illustration of a constant voltage applied to a bipolar electrode according to an embodiment of the invention. In the particular illustrated embodiment, a negative voltage is applied to electrode 116A while a positive voltage is applied to electrode 116B. Figure 14 is a schematic illustration of a constant voltage applied to a monopolar electrode according to an embodiment of the invention. Since the transfer head collects the microdevice shown in Figure 14, the amount of time the transfer head can hold the microdevice can be a function of the discharge rate of the dielectric layer since only a single voltage is applied to a electrode 116. The microdevice release from the transfer head shown in Figure 14 can be achieved by turning off the voltage source, grounding the voltage source, or reversing the polarity of the constant voltage.
[0075] In the particular embodiments illustrated in Figures 12 to 14, microdevices 200 are those illustrated in Figure 27, example 27O. Although the microdevices shown in Figures 12 to 14 can be of any of the micro-LED device structures shown in Figures 27 to 29 and those described in the related Provisional Application no. US 61 / 561.706 and Provisional Order no. US 61 / 59,919. For example, a micro-LED device 200 may include a micro-diode pn 235, 250 and a metallization layer 220 with the metallization layer between the micro-diode pn 235, 250 and a bonding layer 210 formed on a substrate 201 In one embodiment, the micro-diode pn 250 includes a top doped n-layer 214, one or more layers of quantum well 216 and a bottom doped powder layer 218. The micro-diodes pn can be manufactured with side walls straight or tapered side walls. In certain embodiments, micro-diodes p-n 250 have tapered side walls 253 (from top to bottom). In certain embodiments, micro-diodes p-n 235 have tapered inward side walls 253 (from top to bottom). The metallization layer 220 can include one or more layers. For example, metallization layer 220 can include an electrode layer and a barrier layer between the electrode layer and the bonding layer. The micro-diode p-n and the metallization layer can each have a top surface, a bottom surface and side walls. In one embodiment, the bottom surface 251 of the micro-diode p-n 250 is wider than the top surface 252 of the micro-diode p-n and the side walls 253 are tapered out from the top to the bottom. The top surface of the micro-diode p-n 235 may be wider than the bottom surface of the diode p-n or approximately the same width. In one embodiment, the bottom surface 251 of the micro diode pn 250 is wider than the top surface 221 of the plating layer 220. The bottom surface of the micro diode pn can also be wider than the top surface of the metallization layer or approximately the same width as the top surface of the metallization layer.
[0076] A conformal dielectric barrier layer 260 can optionally be formed on the micro-diode p-n 235, 250 and other exposed surfaces. The conformal dielectric barrier layer 260 can be thinner than the micro diode pn 235, 250, metallization layer 220 and optionally the connection layer 210 so that the conformal dielectric barrier layer 260 forms an outline of the topography that it is formed. In one embodiment, the micro diode pn 235, 250 is several microns thick, such as 3 μm, the metallization layer 220 is 0.1 μm to 2 μm thick and the connection layer 210 is 0.1 μm to 2 μm thick. In one embodiment, the conformal dielectric barrier layer 260 is approximately 50 to 600 angstroms in thickness of aluminum oxide (Al2O3). The conformal dielectric barrier layer 260 can be deposited by a variety of suitable techniques such as, but not limited to, atomic layer deposition (ALD). The conformal dielectric barrier layer 260 can protect against load arching between adjacent p-n micro diodes during the collection process and thus protect against adjacent p-n micro diodes from being trapped during the collection process. The conformal dielectric barrier layer 260 can also protect the side walls 253, quantum well layer 216 and bottom surface 251 of the p-n micro diodes from contamination which could affect the integrity of the p-n micro diodes. For example, the conformal dielectric barrier layer 260 can function as a physical barrier to drain the material bonding layer 210 to the side walls and quantum layer 216 of the micro-diodes pn 250. The conformal dielectric barrier layer 260 can also insulate the micro diodes pn 250 once it is placed on a receiving substrate. In one embodiment, the conformal dielectric barrier layer 260 comprises side walls 253 of the p-n micro-diode and can cover a quantum well layer 216 in the p-n micro-diode. The conformal dielectric barrier layer can also partially cover the bottom surface 251 of the micro-diode pn, as well as cover side walls of the plating layer 220. In some embodiments, the conformal dielectric barrier layer also covers side walls of a layer of standard connection 210. A contact opening 262 can be formed in the conformal dielectric barrier layer 260 that exposes the top surface 252 of the pn micro diode.
[0077] With reference to Figure 27, the contact opening 262 can be less than the top surface 252 of the micro-diode pn and the conformal dielectric barrier layer 260 forms a rim around the edges of the top surface 252 of the pn micro diode. Referring to Figure 28, the contact opening 262 may be slightly wider in width than the top surface of the p-n micro diode. In such an embodiment, the contact opening 262 exposes the top surface 252 of the micro-diode pn and an upper portion of the side walls 253 of the micro-diode pn, while the conformal dielectric barrier layer 260 covers and insulates the (s) quantum well layer (s) 216. Referring to Figure 29, the conformal dielectric layer 260 can be approximately the same width as the top surface of the pn micro diode. The conformal dielectric layer 260 can also be on a bottom surface 251 of the micro-diodes p-n illustrated in Figures 27 to 29.
[0078] In one embodiment, the conformal dielectric barrier layer 260 is formed from the same material as the dielectric layer 120 of the connection head. Depending on the particular micro-LED device structure, the conformal dielectric barrier layer 260 can also cover side walls of the connecting layer 210, as well as the carrier substrate and columns, if present. The connecting layer 210 can be formed of a material that can hold the micro-LED device 200 on the carrier substrate 201 during certain processing and handling operations and, when going through a phase change, provides a medium in which the micro device -LED 200 can be retained, but still be immediately releasable during a collection operation. For example, the bonding layer can be re-meltable or refluxable so that the bonding layer undergoes a phase change from solid to liquid before or during the collection operation. In the liquid state, the connection layer can retain the micro-LED device in place of the carrier substrate while also providing a medium from which the micro-LED device 200 is immediately releasable. In one embodiment, the bonding layer 210 has a liquid temperature or melting temperature below approximately 350 oC or more specifically below approximately 200 oC. At such temperatures, the bonding layer may undergo a phase change without substantially affecting the other components of the micro-LED device. For example, the bonding layer can be formed of a metal or metal alloy or a thermoplastic polymer that is removable. For example, the bonding layer can include indium, tin or a thermoplastic polymer such as polyethylene or polypropylene. In one embodiment, the bonding layer can be conductive. For example, where the bonding layer undergoes a phase change from solid to liquid in response to a change in temperature, a portion of the bonding layer may remain in the micro-LED device during the collection operation. In such an embodiment, it may be beneficial that the bonding layer is formed of a conductive material so that it does not adversely affect the micro-LED device when it is subsequently transferred to a receiving substrate. In that case, the conductive portion of the bonding layer that remains on the micro-LED device during transfer can assist in connecting the micro-LED device to a conductive chip on a receiving substrate. In a specific embodiment, the bonding layer can be formed of indium which has a melting temperature of 156.7 oC. The bonding layer can be laterally continuous through the substrate 201 or it can also be formed in separate locations laterally. For example, a location separate laterally from the bonding layer may have a width that is less than or approximately the same width as the bottom surface of the p-n micro diode or metallization layer. In some embodiments, p-n micro diodes can optionally be formed in columns 202 on the substrate.
[0079] Welds can be suitable materials for the bonding layer 210 since many are, in general, ductile materials in the solid state and exhibit favorable humidification with a semiconductor and metal surfaces. A common alloy melts not at a single temperature, but over a range of temperatures. Therefore, solder alloys are often characterized by a liquid temperature that corresponds to the lowest temperature at which the alloy remains liquid and a solid temperature that corresponds to the highest temperature at which the alloy remains solid. An exemplary list of low fusion solder materials that can be used with embodiments of the invention is provided in Table 2. Table 2.

[0080] An exemplary list of thermoplastic polymers that can be used with embodiments of the invention is provided in Table 3.

[0081] Figure 15 is a flow chart illustrating a method of collecting and transferring a microdevice from a carrier substrate to a receiving substrate according to an embodiment of the invention. In operation 1510, a transfer head is positioned on a microdevice connected to a carrier substrate with a bonding layer. The transfer head can be any transfer head described in the present invention. The microdevice can be any one of the micro-LED device structures illustrated in Figures 27 to 29 and those described in the Provisional Order listed in no. US 61 / 561.706 and Provisional Application no. US 61 / 594,919. The microdevice is then placed in contact with the transfer head in operation 1520. In one embodiment, the microdevice is placed in contact with the dielectric layer 120 of the transfer head. In an alternative embodiment, the transfer head is positioned over the microdevice with a suitable air gap that separates them and does not significantly affect the handle pressure, for example, 1 nm (0.001 μm) or 10 nm (0, 01 μm). In operation 1525, an operation is performed to create a phase change in the connecting layer 210 from solid to liquid. For example, the operation may include heating an In connection layer to or above the melting temperature of 156.7 oC. In another embodiment, operation 1525 can be performed before operation 1520. In operation 1530, a voltage is applied to the electrode to create a grip pressure on the microdevice and the microdevice and a portion of the substantial bonding layer 210 is collected with the transfer head in operation 1540. For example, approximately half of the connecting layer 210 can be collected with the microdevice. In an alternative embodiment, none of the bonding layer 210 is collected with the transfer head. In operation 1545, the microdevice and the connecting layer portion 210 are brought into contact with a receiving substrate. The microdevice and a portion of the bonding layer 210 are then released on the receiving substrate in operation 1550. A variety of operations can be performed to control the phase of the bonding layer portion by collecting, transferring, contacting the substrate and release the microdevice and connecting layer portion 210 onto the receiving substrate. For example, the portion of the bonding layer that is collected with the microdevice can be kept in a liquid state during the contact operation 1545 and during the release operation 1550. In another embodiment, the portion of the bonding layer can be allowed to cool to a solid phase after being collected. For example, the bonding layer portion may be in a solid phase during the 1545 contact operation and again fused to the liquid state before or during the 1550 release operation. A variety of temperature and material phase cycles can be carried out according to modalities of the invention.
[0082] Figure 16 is a flow chart illustrating a method of collecting and transferring an array of microdevices from a carrier substrate to at least one receiving substrate according to one embodiment of the invention. In operation 1610, an array of transfer heads is positioned over an array of microdevices, with each transfer head having a table structure, an electrode on the table structure and a dielectric layer that covers the electrode. In operation 1620, the array of microdevices is brought into contact with the array of transfer heads. In an alternative embodiment, the arrangement of transfer heads is positioned over the arrangement of microdevices with a suitable air gap that separates them that does not significantly affect the grip pressure, for example, 1 nm (0.001 μm) or 10 nm (0.01 μm). Figure 17 is a side view illustration of an array of microdevice transfer heads 100 in contact with an array of micro-LED devices 200 according to an embodiment of the invention. As shown in Figure 17, the step (P) of the transfer head arrangement 100 corresponds to the step of the micro-LED devices 200 with the step (P) of the transfer head arrangement being the sum of the spacing (S) between head transfer with the width (W) of a transfer head.
[0083] In one embodiment, the array of micro-LED devices 200 has a pitch of 10 μm, with each micro-LED device having a spacing of 2 μm and a maximum width of 8 μm. In an exemplary embodiment, it is assumed that in a micro-diode p-n 250 with straight side walls, the top surface of each micro-LED device 200 has a width of approximately 8 μm. In such an exemplary embodiment, the width of the top surface 121 of a corresponding transfer head 100 is approximately 8 µm or less in order to avoid making involuntary contact with an adjacent micro-LED device. In another embodiment, the arrangement of micro-LED devices 200 can have a pitch of 5 μm, with each micro-LED device having a spacing of 2 μm and a maximum width of 3 μm. In an exemplary embodiment, the top surface of each 200 micro-LED device is approximately 3 μm wide. In such an exemplary embodiment, the width of the top surface 121 of a corresponding transfer head 100 is approximately 3 μm or less in order to avoid making involuntary contact with an adjacent micro-LED device 200. However, embodiments of the invention are not limited to these specific dimensions and can be of any suitable dimension.
[0084] Figure 18 is a side view illustration of an array of microdevice transfer heads in contact with an array of micro-LED devices 200 according to an embodiment of the invention. In the embodiment illustrated in Figure 18, the step (P) of the transfer heads is an integer multiple of the step of the microdevice arrangement. In the particular mode illustrated, the step (P) of the transfer heads is 3 times the step of the arrangement of micro-LED devices. In such an embodiment, having a larger transfer head pitch can protect against arching between transfer heads.
[0085] With reference again to Figure 16, in operation 1630, a voltage is selectively applied to a portion of the transfer head arrangement 100. Therefore, each transfer head 100 can be operated independently. In operation 1640, a corresponding portion of the microdevice array is collected with the portion of the transfer head array to which the voltage has been selectively applied. In one embodiment, selectively applying a voltage to a portion of the transfer head arrangement means applying a voltage to each transfer head in the transfer head arrangement. Figure 19 is a side view illustration of each transfer head in an array of microdevice transfer heads that collects an array of micro-LED devices 200 according to an embodiment of the invention. In another embodiment, selectively applying a voltage to a portion of the transfer head arrangement means applying less voltage than all transfer heads (for example, a subset of transfer heads) to the transfer head arrangement. Figure 20 is a side view illustration of a subset of the array of microdevice transfer heads that collect a portion of a array of micro-LED devices 200 according to an embodiment of the invention. In a particular embodiment illustrated in Figures 19 to 20, the collection operation includes collecting the micro-diode pn 250, the metallization layer 220 and a portion of the conformal barrier layer 260 for the micro-LED device 200. In a In the particular embodiment illustrated in Figures 19 to 20, the collection operation includes collecting a substantial portion of the connecting layer 210. Consequently, any of the modalities described in connection with Figures 16 to 22 can also be obtained by controlling the temperature of the portion of the connection layer 210 as described in relation to Figure 15. For example, embodiments described in relation to Figures 16 to 22 may include performing an operation to create a phase change from solid to liquid in a plurality of locations of the connection layer that connect the array of microdevices to the carrier substrate 201 before collecting the array of microdevices. In one embodiment, the plurality of link layer locations can be regions of the same link layer. In one embodiment, the plurality of locations of the link layer can be locations separate laterally from the link layer.
[0086] In operation 1650, the microdevice array portion is then released on at least one receiving substrate. Thus, the array of micro LEDs can be fully released on a single receiving substrate or selectively released on multiple substrates. For example, the receiving substrate can be, but is not limited to, a display substrate, a lighting substrate, a substrate with functional devices such as transistors or ICs or a substrate with metal redistribution lines. The release can be obtained by applying the applied voltage in any of the ways described in relation to Figures 12 to 14.
[0087] Figure 21 is a side view illustration of an array of microdevice transfer heads that retain a corresponding array of micro-LED devices 200 on a receiving substrate 301 that includes the plurality of trigger contacts 310. The array of micro-LED devices 200 can then be brought into contact with the receiving substrate and then selectively released. Figure 22 is a side view illustration of a single micro-LED device 200 selectively released on the receiving substrate 301 over a trigger contact 310 according to an embodiment of the invention. In another embodiment, more than one micro-LED 200 device is released or the entire array of micro-LED 200 devices is released.
[0088] By using the various aspects of this invention, it will become apparent to the person skilled in the art that combinations or variations of the above modalities are possible to form a microdevice transfer head and head arrangement and to transfer a microdevice and microdevice arrangement. Although the present invention has been described in specific language for structural features and / or methodological acts, it should be understood that the invention defined in the embodiments is not necessarily limited to the specific features or acts described. The specific features and acts disclosed should, instead, be understood as particularly elegant implementations of the claimed invention useful to illustrate the present invention.

权利要求:
Claims (20)
[0001]
1. Bipolar electrostatic transfer head (100) comprising a base substrate (102), the bipolar electrostatic transfer head (100) characterized by the fact that it comprises: a table structure (104) that includes side walls (106) which project away from the base substrate (102) to provide a localized contact point for the bipolar electrostatic transfer head (100); a dielectric layer (120) covering the table structure (104); and a conductive ground plane (130) formed on the base substrate (102) and surrounding the table structure (104).
[0002]
2. Bipolar electrostatic transfer head (100), according to claim 1, characterized by the fact that the table structure (104) forms a single piece with the base substrate (102).
[0003]
3. Bipolar electrostatic transfer head (100), according to claim 1, characterized by the fact that the base substrate (102) and the table structure (104) each comprise silicon.
[0004]
4. Bipolar electrostatic transfer head (100), according to claim 1, characterized by the fact that it also comprises an electrode (116, 116A, 116B) formed on a top surface (108) of the table structure ( 104), and the dielectric layer (120) covers the electrode (116, 116A, 116B).
[0005]
5. Bipolar electrostatic transfer head (100), according to claim 4, characterized by the fact that it also comprises an electrode conductor (114, 114A, 114B) that moves from the electrode (116, 116A, 116B) on the top surface (108) of the table structure (104) and along a side wall (106) of the table structure (104).
[0006]
6. Bipolar electrostatic transfer head (100), according to claim 5, characterized by the fact that the dielectric layer (120) covers the electrode conductor (114, 114A, 114B) along the side wall (106) of the table structure (104).
[0007]
7. Bipolar electrostatic transfer head (100), according to claim 4, characterized by the fact that it also comprises a means (117A, 117B) through the table structure (104) that connects the electrode (116, 116A 116B) to an electrode conductor (114, 114A, 114B).
[0008]
8. Bipolar electrostatic transfer head (100), according to claim 4, characterized by the fact that the electrode (116, 116A, 116B) comprises a material selected from the group consisting of platinum, titanium, vanadium, chromium , zirconium, niobium, molybdenum, ruthenium, rhodium, hafnium, tantalum, tungsten, rhenium, osmium, iridium and their alloys.
[0009]
9. Bipolar electrostatic transfer head (100), according to claim 4, characterized by the fact that the electrode (116, 116A, 116B) comprises TiW.
[0010]
10. Bipolar electrostatic transfer head (100), according to claim 1, characterized by the fact that the dielectric layer (120) comprises a dielectric material selected from the group consisting of Al2O3 and Ta2O5.
[0011]
11. Bipolar electrostatic transfer head (100), according to claim 1, characterized by the fact that it also comprises a pair of electrodes (116, 116A, 116B) formed on a top surface (108) of the structure of table (104), in which the dielectric layer (120) covers the pair of electrodes (116, 116A, 116B).
[0012]
12. Bipolar electrostatic transfer head (100), according to claim 11, characterized by the fact that it also comprises a pair of electrode conductors (114, 114A, 114B), in which each electrode conductor (114, 114A, 114B) moves from a corresponding electrode (116, 116A, 116B) on the top surface (108) of the table structure (104) along a side wall (106) of the table structure (104).
[0013]
13. Bipolar electrostatic transfer head (100) according to claim 12, characterized by the fact that the dielectric layer (120) covers the pair of electrode conductors (114, 114A, 114B) along the side wall (106 ) of the table structure (104).
[0014]
14. Bipolar electrostatic transfer head (100), according to claim 11, characterized by the fact that it also comprises a means (117A, 117B) through the table structure (104) that connects one of the pair of electrodes (116, 116A, 116B) to an electrode conductor (114, 114A, 114B).
[0015]
15. Bipolar electrostatic transfer head (100), according to claim 1, characterized by the fact that it comprises: an arrangement of bipolar electrostatic transfer head structures (100); the dielectric layer (120) covering the table structure (104) of each bipolar electrostatic transfer head (100); and the conductive ground plane (130) that surrounds each of the table structures (104).
[0016]
16. Bipolar electrostatic transfer head (100), according to claim 15, characterized by the fact that each table structure (104) forms a single piece with the base substrate (102).
[0017]
17. Bipolar electrostatic transfer head (100), according to claim 15, characterized by the fact that the base substrate (102) and each table structure (104) each comprise silicon.
[0018]
18. Bipolar electrostatic transfer head (100), according to claim 15, characterized by the fact that it also comprises an electrode (116, 116A, 116B) formed on a top surface (108) of each table structure (104), and the dielectric layer (120) covers each electrode (116, 116A, 116B).
[0019]
19. Bipolar electrostatic transfer head (100), according to claim 18, characterized by the fact that each electrode (116, 116A, 116B) comprises a material selected from the group consisting of platinum, titanium, vanadium, chromium , zirconium, niobium, molybdenum, ruthenium, rhodium, hafnium, tantalum, tungsten, rhenium, osmium, iridium and their alloys.
[0020]
20. Bipolar electrostatic transfer head (100), according to claim 15, characterized by the fact that the dielectric layer (120) comprises a dielectric material selected from the group consisting of Al2O3 and Ta2O5.

类似技术:

公开号 | 公开日 | 专利标题

BR112014011800B1|2020-12-22|bipolar electrostatic transfer head

BR112014011849B1|2020-12-15|TRANSFER HEAD ASSEMBLY AND TRANSFER TOOL

同族专利:

公开号 | 公开日

KR20140103963A|2014-08-27|

BR112014011800A2|2017-05-09|

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EP2780934B1|2021-03-24|

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法律状态:
2018-04-10| B25A| Requested transfer of rights approved|Owner name: APPLE INC. (US) |

2018-12-04| B06F| Objections, documents and/or translations needed after an examination request according [chapter 6.6 patent gazette]|

2019-11-26| B06U| Preliminary requirement: requests with searches performed by other patent offices: procedure suspended [chapter 6.21 patent gazette]|

2020-10-13| B09A| Decision: intention to grant [chapter 9.1 patent gazette]|

2020-12-22| B16A| Patent or certificate of addition of invention granted|Free format text: PRAZO DE VALIDADE: 20 (VINTE) ANOS CONTADOS A PARTIR DE 07/11/2012, OBSERVADAS AS CONDICOES LEGAIS. |

优先权:

申请号 | 申请日 | 专利标题

US201161561706P| true| 2011-11-18|2011-11-18|

US201261594919P| true| 2012-02-03|2012-02-03|

US61/594,919|2012-02-03|

US201261597109P| true| 2012-02-09|2012-02-09|

US61/597,109|2012-02-09|

US13/372,310|US8333860B1|2011-11-18|2012-02-13|Method of transferring a micro device|

US13/372,292|US9620478B2|2011-11-18|2012-02-13|Method of fabricating a micro device transfer head|

US13/372,310|2012-02-13|

US13/372,292|2012-02-13|

US13/372,277|2012-02-13|

US13/372,277|US8646505B2|2011-11-18|2012-02-13|Micro device transfer head|

PCT/US2012/063990|WO2013074355A1|2011-11-18|2012-11-07|Micro device transfer head|

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